Scientific journal
Название журнала на английском
ISSN 2500-0802
ПИ №ФС77-61154

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CRISTALLIZATION BEHAVOR AND ION-CONDUCTING OF GLASSES IN THE GESE2-SB2SE3-AGI GLASS FORMATION SYSTEM

Tveryanovich Y.S. 1 Fokin S.V. 1 Pimenov V.V. 1 Tomaev V.V. 1
1 Chemical Faculty of Saint-Petersburg State University
Bulk samples and thin films of glasses GeSe2-Sb2Se3-AgI were studied. The particular attention was been focused on the crystallization behavior and ionic conductivity of films and glasses. The films were obtained by laser ablation of glasses in vacuum. Obtained bulk samples were studied by X-ray diffraction (XRD), differential thermal analysis (DTA) and impedance spectroscopy. Deposited films were investigated by XRD and impedance spectroscopy. Surface morphology of the films was monitored by electron microscopy. The elemental composition was confirmed by EDX method. It is shown that the glass containing 40 mol. % AgI possess significantly high (comparing with other chalcogenide glasses) softening temperature (190 ° C) and high crystallization resistance, and the logarithm of conductivity is about -3.5 at 100 ° C, the activation energy is about 0.5 eV.